Growth and characterization of ZnSe-based II-VI semiconductors by MOVPE

被引:1
作者
Fujita, S [1 ]
Fujita, S [1 ]
机构
[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 606, Japan
来源
II-VI BLUE/GREEN LIGHT EMITTERS : DEVICE PHYSICS AND EPITAXIAL GROWTH | 1997年 / 44卷
关键词
D O I
10.1016/S0080-8784(08)60192-1
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
[No abstract available]
引用
收藏
页码:59 / 81
页数:23
相关论文
共 90 条
[1]   ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF P-TYPE ZNSE USING PHENYLHYDRAZINE AS THE DOPANT SOURCE [J].
AKRAM, S ;
BHAT, I .
JOURNAL OF CRYSTAL GROWTH, 1994, 138 (1-4) :105-109
[2]  
ANDO H, 1985, J APPL PHYS, V58, P8021
[3]  
BLANCONNIER P, 1978, THIN SOLID FILMS, V55, P375, DOI 10.1016/0040-6090(78)90154-2
[4]   NEW ALLYL SELENIDE AND TRIALKYLPHOSPHINE SELENIDE PRECURSORS FOR METALORGANIC VAPOR-PHASE EPITAXY OF ZNSE [J].
DANEK, M ;
HUH, JS ;
FOLEY, L ;
JENSEN, KF .
JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) :530-536
[5]   PHOTO-ASSISTED GROWTH AND CHARACTERIZATION OF ZNXCD1-XS BY MOVPE [J].
DUMONT, H ;
FUJITA, S ;
FUJITA, S .
APPLIED SURFACE SCIENCE, 1995, 86 (1-4) :442-446
[6]  
DUMONT L, 1995, JPN J APPL PHYS, V34, pL1336
[7]   BLUE AND GREEN LIGHT-EMITTING DIODE STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY ON ZNSE SUBSTRATES [J].
EASON, D ;
REN, J ;
YU, Z ;
HUGHES, C ;
COOK, JW ;
SCHETZINA, JF ;
ELMASRY, NA ;
CANTWELL, G ;
HARSH, WC .
JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) :718-724
[8]  
FUJII Y, 1993, 1993 INT C SOL STAT, P65
[9]   IODINE DOPING IN ZNSE IN HIGH-TEMPERATURE RANGE BY METALORGANIC VAPOR-PHASE EPITAXY [J].
FUJIMOTO, M ;
SUEMUNE, I ;
OSAKA, H ;
FUJII, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (4A) :L524-L527
[10]   ELECTROCHEMICAL PHOTOLYSIS OF WATER AT A SEMICONDUCTOR ELECTRODE [J].
FUJISHIMA, A ;
HONDA, K .
NATURE, 1972, 238 (5358) :37-+