Deuterium retention in silicon carbide, SiC ceramic matrix composites, and SiC coated graphite

被引:8
作者
Koller, Markus T. [1 ]
Davis, James W. [2 ]
Goodland, Megan E. [2 ]
Abrams, Tyler [3 ]
Gonderman, Sean [3 ]
Herdrich, Georg [1 ]
Friess, Martin [4 ]
Zuber, Christian [4 ]
机构
[1] Inst Space Syst IRS, Pfaffenwaldring 29, D-70569 Stuttgart, Germany
[2] Univ Toronto Inst Aerosp Studies UTIAS, 4925 Dufferin St, Toronto, ON M3H 5T6, Canada
[3] Gen Atom, 3550 Gen Atom Court, San Diego, CA 92121 USA
[4] German Aerosp Ctr DLR, Inst Struct & Design, Pfaffenwaldring 38-40, D-70569 Stuttgart, Germany
关键词
Deuterium Retention; Silicon Carbide; Ceramic Composite Materials; Low Z Materials;
D O I
10.1016/j.nme.2019.100704
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
Silicon Carbide (SiC) is a low Z material discussed as an alternative to graphite for fusion devices. The retention of hydrogenous species is an important plasma-surface interaction property. Deuterium was implanted into SiC, SiCf/SiC, C-f/C-SiC and SiC coated graphite under various particle energy and substrate temperature conditions. A TDS process was used to characterise the deuterium retention of the implanted specimens. While all SiC materials show elevated retention levels compared to graphite, the differences are limited to about a factor of two over the range of parameters investigated.
引用
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页数:5
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