Two-dimensional WS2/MoS2 heterostructures: properties and applications

被引：102
|
作者：
Chen, Yichuan [1 ,2 ]
Sun, Mengtao [1 ]
机构：
[1] Univ Sci & Technol Beijing, Beijing Adv Innovat Ctr Mat Genome Engn, Sch Math & Phys, Beijing 100083, Peoples R China
[2] Shandong Normal Univ, Collaborat Innovat Ctr Light Manipulat & Applicat, Jinan 250358, Peoples R China
来源：
NANOSCALE | 2021年 / 13卷 / 11期
基金：
中国国家自然科学基金;
关键词：
TRANSITION-METAL DICHALCOGENIDES; ULTRAFAST CHARGE-TRANSFER; THIN-FILM TRANSISTORS; ACTIVE EDGE SITES; FEW-LAYER MOS2; THERMAL-CONDUCTIVITY; HIGH-PERFORMANCE; MONOLAYER MOS2; THERMOELECTRIC PROPERTIES; PHOTOELECTROCHEMICAL DETECTION;
D O I：
10.1039/d1nr00455g
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The successful fabrication of WS2/MoS2 heterostructures provides more possibilities for optoelectronic and thermoelectric applications than graphene because of their direct bandgap characteristics; therefore, scientific investigations on WS2/MoS2 heterostructures are more significant and thriving. In this paper, we review the latest research progress in WS2/MoS2 heterostructures, and look forward to their properties and applications. Firstly, we analyze the crystal structure and electronic structure of WS2, MoS2, and their heterostructures. Secondly, we comprehensively present the widely used methods for preparing heterostructures. Finally, based on the unique physical characteristics of WS2/MoS2 heterostructures, we focus on their properties and applications in mechanics, electronics, optoelectronics, and thermoelectronics.
引用
收藏
页码：5594 / 5619
页数：26
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