Improved stability of a phase change memory device using Ge-doped SbTe at varying ambient temperature

被引：17

作者：

Wu, Zhe ^{[1
,2
]}

Lee, Suyoun ^{[1
]}

Park, Young-Wook ^{[1
,3
]}

Ahn, Hyung-Woo ^{[1
]}

Jeong, Doo Seok ^{[1
]}

Jeong, Jeung-hyun ^{[1
]}

No, Kwangsoo ^{[2
]}

Cheong, Byung-ki ^{[1
]}

机构：

[1] Korea Inst Sci & Technol, Ctr Elect Mat, Seoul 136791, South Korea

[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

[3] Seoul Natl Univ Gwanak Ro, Dept Mat Sci & Engn, Seoul 151742, South Korea

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 13期

关键词：

amorphous semiconductors; antimony compounds; carrier density; carrier mobility; energy gap; germanium; germanium compounds; optical constants; phase change memories;

D O I：

10.1063/1.3374334

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ge-doped SbTe (Ge-ST) was compared with Ge2Sb2Te5 (GST) for its potential use in the phase-change memory with improved stability at varying ambient temperature (T-A). Device characteristics such as RESET current, RESET resistance, and SET resistance of Ge-ST devices were found to vary significantly less with T-A than those of GST devices. From measured carrier density, mobility, and optical band gaps, these findings are interpreted to derive from a metallic nature of the crystalline Ge-ST in contrast with a semiconducting nature of the crystalline GST as well as a relatively weaker covalent bonding in amorphous Ge-ST.

引用

页数：3

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