Effects of annealing conditions on the crystallization and grain growth of metastable Ge2Sb2Te5

被引：7
|
作者：
Park, YJ [1 ]
Lee, JY
Youm, MS
Kim, YT
机构：
[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
[2] Korea Inst Sci & Technol, Semicond Mat & Devices Lab, Seoul 136791, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 1A期
关键词：
Ge2Sb2Te5; TEM; rapid thermal annealing; crystallization; grain growth;
D O I：
10.1143/JJAP.44.326
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The Ge2Sb2Te5 thin films deposited by a sputtering method on a SiO2/Si substrate were annealed. and subjected to transmission electron microscopy in order to investigate the crystallization and growth of the metastable Ge2Sb2Te5. The metastable Ge2Sb2Te5 was initially crystallized with 10-nm-sized grains and its sheet resistance was still as high as in the amorphous state. Sheet resistance was abruptly decreased at the grain growth stage after the crystallization.
引用
收藏
页码：326 / 327
页数：2
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