Coupling effect of on-chip, inductor with variable metal width

被引:5
作者
Hsu, Heng-Ming [1 ]
Chang, Jen-Zien [1 ]
Chien, Hung-Chi [1 ]
机构
[1] Natl Chung Hsing Univ, Dept Elect Engn, Taichung 40227, Taiwan
关键词
coupling; inductor; integrated circuits (ICs); planar inductor; SPIRAL INDUCTORS; DESIGN; IMPROVEMENT; AMPLIFIER; SILICON;
D O I
10.1109/LMWC.2007.899306
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This study proposes a proper layout of on-chip inductors to diminish the coupling effect in silicon-based technology. Keeping self inductance constant, the mutual inductance is measured to characterize coupling effect in three test keys. A layout with variable metal width of inductor is found to alleviate mutual inductance. Experiment results demonstrate the mutual inductance decreases 33.5% compared with standard layout. This information will be helpful in implementation of more than one inductor into radio frequency integrated circuits (RFICs).
引用
收藏
页码:498 / 500
页数:3
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