Multiple negative-differential-resistance switches based on an InGaP/GaAs/InGaAs step-compositional-emitter bipolar transistor for multiple-valued logic application

被引：1

作者：

Tsai, JH ^{[1
]}

Zhu, KP ^{[1
]}

Chu, YC ^{[1
]}

Chiu, SY ^{[1
]}

机构：

[1] Natl Kaohsiung Natl Univ, Dept Phys, Kaohsiung 802, Taiwan

来源：

SOLID-STATE ELECTRONICS | 2005年 / 49卷 / 03期

关键词：

InGaP/GaAs/InGaAs; step compositional emitter; heterojunction bipolar transistor; negative differential resistance; confinement effect; switch; multiple-valued logic;

D O I：

10.1016/j.sse.2004.11.004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel functional InGaP/GaAs/InGaAs step-compositional-emitter heterojunction bipolar transistor (HBT) is fabricated and demonstrated. Due to the avalanche multiplication and discontinuous confinement effects for electrons in the InGaAs quantum well and at InGaP/GaAs heterojunction, respectively, an interesting triple-route S-shaped negative-differential-resistance switch is observed under inverted operation mode at room temperature. In addition, the excellent transistor performances including a high current gain of 220 and a low offset voltage of 60 mV are achieved under normal operation mode. Consequently, the device could be used for signal amplifier under normal operation mode and multiple-valued logic circuit application under inverted operation mode. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：357 / 361

页数：5

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