Effects of stabilizer ratio on photoluminescence properties of sol-gel ZnO nano-structured thin films

被引:34
作者
Boudjouan, F. [1 ]
Chelouche, A. [1 ]
Touam, T. [2 ]
Djouadi, D. [1 ]
Khodja, S. [2 ]
Tazerout, M. [1 ]
Ouerdane, Y. [3 ]
Hadjoub, Z. [2 ]
机构
[1] Univ Bejaia, Lab Genie Environm, Bejaia 06000, Algeria
[2] Univ Badji Mokhtar, Semicond Lab, Annaba 23000, Algeria
[3] Univ St Etienne, Lab Hubert Curien, F-42000 St Etienne, France
关键词
ZnO thin films; Sol-gel; Stabilizer ratio; Photoluminescence; DOPED ZNO; OPTICAL-PROPERTIES; FERROMAGNETIC BEHAVIOR; SPRAY-PYROLYSIS; TEMPERATURE; CELLS; DEPOSITION; EFFICIENCY; PH;
D O I
10.1016/j.jlumin.2014.09.026
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Nanostructured ZnO thin films with different molar ratios of MEA to zinc acetate (0.5, 1.0, 1.5 and 2.0) have been deposited on glass substrates by a sol-gel dip coating technique. X-ray diffraction, Scanning Electron Microscopy, UV-visible spectrophotometry and photoluminescence spectroscopy have been employed to investigate the effect of MEA stabilizer ratio on structural, morphological, absorbance and emission properties of the ZnO thin films. Diffraction patterns have shown that all the films are polycrystalline and exhibit a wurtzite hexagonal structure. The c axis orientation has been enhanced with increasing stabilizer ratio. SEM micrographs have revealed that the morphology of the ZnO films depend on stabilizer ratio. The UV-visible absorption spectra have demonstrated that the optical absorption is affected by stabilizer ratio. The photoluminescence spectra have indicated one ultraviolet and two visible emission bands (green and red), while band intensities are found to be dependent on stabilizer ratio. ZnO thin films deposited at MEA ratio of 1.0 show the highest UV emission while the minimum UV emission intensity is observed in thin films deposited at ratio of 0.5 and the maximum green has been recorded for films deposited at MEA ratio of 2.0. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:32 / 37
页数:6
相关论文
共 47 条
[1]   LARGE AREA PIEZOELECTRIC ZNO FILM TRANSDUCERS PRODUCED BY RF DIODE SPUTTERING [J].
AEUGLE, T ;
BIALAS, H ;
HENEKA, K ;
PLEYER, W .
THIN SOLID FILMS, 1991, 201 (02) :293-304
[2]  
Benelmadjat H, 2011, J OPTOELECTRON ADV M, V13, P122
[3]   Influence of Ag doping on structural and optical properties of ZnO thin films synthesized by the sol-gel technique [J].
Chelouche, A. ;
Djouadi, D. ;
Merzouk, H. ;
Aksas, A. .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2014, 115 (02) :613-616
[4]   Study of structural and optical properties of iron doped ZnO thin films prepared by sol-gel [J].
Chelouche, Azeddine ;
Djouadi, Djamel ;
Aksas, Ali .
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2013, 64 (01) :10304-p1
[5]   Effect of film thickness and annealing temperature on the structural and optical properties of ZnO thin films deposited on sapphire (0001) substrates by sol-gel [J].
Cui, Lin ;
Wang, Gui-Gen ;
Zhang, Hua-Yu ;
Sun, Rui ;
Kuang, Xu-Ping ;
Han, Jie-Cai .
CERAMICS INTERNATIONAL, 2013, 39 (03) :3261-3268
[6]   Highly transparent ZnO bilayers by LP-MOCVD as front electrodes for thin-film micromorph silicon solar cells [J].
Ding, L. ;
Boccard, M. ;
Bugnon, G. ;
Benkhaira, M. ;
Nicolay, S. ;
Despeisse, M. ;
Meillaud, F. ;
Ballif, C. .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2012, 98 :331-336
[7]   Effect of sol concentration on the properties of ZnO thin films prepared by sol-gel technique [J].
Dutta, M. ;
Mridha, S. ;
Basak, D. .
APPLIED SURFACE SCIENCE, 2008, 254 (09) :2743-2747
[8]   Effects of the morphology of nanostructured ZnO films on the efficiency of dye-sensitized solar cells [J].
Giannouli, M. ;
Spiliopoulou, F. .
RENEWABLE ENERGY, 2012, 41 :115-122
[9]   Effect of ZnCl2 concentration on the growth of ZnO by electrochemical deposition [J].
Kim, Hyunghoon ;
Moon, Jin Young ;
Lee, Ho Seong .
CURRENT APPLIED PHYSICS, 2012, 12 :S35-S38
[10]   Effect of preheating temperature on structural and optical properties of ZnO thin films by sol-gel process [J].
Kim, YS ;
Tai, WP ;
Shu, SJ .
THIN SOLID FILMS, 2005, 491 (1-2) :153-160