Analysis of HLB pass filter using silicon photonics structure

被引:14
作者
Mishra, C. S. [1 ]
Palai, G. [1 ]
Prakash, Deo [2 ]
Tripathy, S. K. [3 ]
Verma, K. D. [4 ]
机构
[1] GITA, Bhubaneswar, Orissa, India
[2] SMVD Univ, Fac Engn, Sch Comp Sci & Engn, Katra 182320, J&K, India
[3] Berhampur Univ, Post Grad Dept Phys, Odisha, India
[4] SV Coll, Mat Sci Res Lab, Dept Phys, Aligarh 202001, UP, India
来源
OPTIK | 2017年 / 144卷
关键词
Silicon photonics; HBL filter; Reflectance; CRYSTAL-STRUCTURE; GRATING STRUCTURE; PWE APPROACH; WAVE-GUIDE; REALIZATION; BANDGAP; TEMPERATURE; SIMULATION;
D O I
10.1016/j.ijleo.2017.07.026
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
High, low and band (HLB) pass filter using silicon waveguide structure is presented in this research. Silicon structure is realised by the combination of nine layers of silicon and air material in an alternative arrangement. Reflection characteristics of above proposed structure is a salient feature to envisage the filtering application where reflection properties are investigated by employing plane wave expansion technique. Finally simulation studies divulges that all three type of filters (High, Low and Band pass) can be designed by changing structure parameter including the thickness of odd and even layer of silicon waveguide structure. (C) 2017 Elsevier GmbH. All rights reserved.
引用
收藏
页码:522 / 527
页数:6
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