Cyclotron resonance of two-dimensional electron system affected by neighboring quantum dot layer

被引：0

作者：

Takehana, K. ^{[1
]}

Imanaka, Y. ^{[1
]}

Takamasu, T. ^{[1
]}

Henini, M. ^{[2
]}

机构：

[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

[2] Univ Nottingham, Nottingham Nanotechnol & Nanosci Ctr, Sch Phys & Astron, Nottingham NG7 2RD, England

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 19期

基金：

英国工程与自然科学研究理事会;

关键词：

cyclotron resonance; electron mobility; electron traps; III-V semiconductors; indium compounds; self-assembly; semiconductor quantum dots; two-dimensional electron gas; MAGNETIC-FIELD; GAS; INAS; HETEROSTRUCTURES; TRANSPORT;

D O I：

10.1063/1.3430062

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the cyclotron resonance (CR) in a two-dimensional electron system (2DES) separated by a thin barrier layer from InAs self-assembled quantum dots (QDs). Two absorption peaks of CR of the 2DES were clearly observed, indicating coexistence of free electrons with high mobility and trapped electrons within local potential minima caused by the neighboring QDs. The CR of the trapped electrons changes its intensity, corresponding to the charge state of the QDs. This is the first optical measurements to show that the charge state of the QDs affects on the 2DES in the role as a floating gate. (C) 2010 American Institute of Physics. [doi:10.1063/1.3430062]

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页数：3

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