Quantum cascade detectors for very long wave infrared detection

被引：37

作者：

Buffaz, A. ^{[1
]}

Carras, M. ^{[2
]}

Doyennette, L. ^{[1
]}

Nedelcu, A. ^{[2
]}

Marcadet, X. ^{[2
]}

Berger, V. ^{[1
,2
]}

机构：

[1] Univ Paris Diderot, CNRS, UMR7162, Lab Mat & Phenomenes Quant, F-75205 Paris 13, France

[2] Alcatel Thales 3 5 Lab, F-91767 Palaiseau, France

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 17期

关键词：

aluminium compounds; gallium arsenide; III-V semiconductors; infrared detectors; photodetectors; semiconductor quantum wells;

D O I：

10.1063/1.3409139

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A high responsivity GaAs/AlGaAs quantum cascade detector is demonstrated at a wavelength of 15 mu m. The quantum design is optimized for negative bias operation, so that the capture of photoexcited electrons back to the fundamental level is minimized. The detectivity of the detector presented here reaches 1.1x10(12) Jones at 25 K for an applied bias of -0.6 V.

引用

页数：3

共 13 条

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