2D/3D interface engineering: direct Z-scheme g-C3N4/YMnO3 heterojunction for reinforced visible-light photocatalytic oxidation

被引:30
作者
Wu, Yizhang [1 ]
Zhou, Xuan [1 ]
Li, Mengmeng [1 ]
Wang, Yuanqi [1 ]
Zhou, Boye [1 ]
Wu, Niandu [1 ]
Zhong, Wei [1 ]
Cai, Hong-Ling [1 ]
Wu, X. S. [1 ]
机构
[1] Nanjing Univ, Sch Phys, Lab Solid State Microstruct, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China
基金
国家重点研发计划;
关键词
CO2; REDUCTION; CARBON NITRIDE; H-2; EVOLUTION; CONSTRUCTION; COMPOSITE; METAL; GRAPHENE; DEGRADATION; STABILITY; WATER;
D O I
10.1007/s10854-019-02109-y
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Graphitic carbon nitride (g-C3N4) is a two-dimensional (2D) photocatalyst, but it appears a mediocre catalytic property due to the recombination of charge carriers. Constructing heterojunctions can boost the separation and suppress the recombination of photo-generated electron-hole pairs. For the conventional Type-II heterojunction, the oxidation ability is significantly reduced due to the decreasing of band gap. We try to maintain its oxidation capacity and promote the artificial bandgap by tailoring a Z-scheme heterojunction through interface engineering. Herein, we grafted different proportions of YMnO3 3D-nanoparticles onto g-C3N4 2D-nanosheets. This special 2D/3D mixed-dimensional nanocomposite exhibits efficient charge carrier transport performance according to the electrochemistry and photocurrent measurement. The outstanding photocatalytic oxidation ability can be verified by the rate of Rhodamine B degradation, which is 3.8 and 2.3 times of YMnO3 and g-C3N4, respectively. Theoretical calculation, active group capture experiments and electron spin resonance indicate the energy band position and the reactive groups (superoxide radicals and holes). The optimized g-C3N4/YMnO3 heterojunction utilizes the interfacial synergistic effect to achieve a composition of vigorous oxidizing ability and outstanding visible light harvesting. This work will pave a promising access for mechanism and interface engineering of other g-C3N4-based Z-scheme heterojunctions.
引用
收藏
页码:17601 / 17611
页数:11
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