High-concentration arsenic-doped silicon hydrogenated by microwave plasma

被引:0
作者
Yokota, K [1 ]
Hosokawa, K
Terada, K
Hirai, K
Takano, H
Kumagai, M
Ando, Y
Matsuda, K
机构
[1] Kansai Univ, High Technol Res Ctr, Osaka 564, Japan
[2] Kansai Univ, Fac Engn, Osaka 564, Japan
[3] Kansai Univ, Fac Engn, Suita, Osaka 564, Japan
[4] Kanagawa High Technol Fdn, Kanagawa 213, Japan
[5] Nissin Elect Co Ltd, Ukyo Ku, Kyoto 615, Japan
关键词
D O I
暂无
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Silicon that is heavily doped with arsenic was treated in a microwave hydrogen plasma at temperatures of 530-600 degrees C. This hydrogenation increased the carrier concentration in the surface region where the concentration of As exceeded about 2 x 10(20) cm(-3), but not in the more lightly doped regions. X-ray photoelectron spectroscopy leads us to propose that As clusters are dissociated by atomic hydrogen and that this declustering increases carrier concentration.
引用
收藏
页码:1028 / 1033
页数:6
相关论文
共 18 条
[1]  
BAKER AD, 1972, PHOTOELECTRON SPECTR, P150
[2]   DONOR-HYDROGEN COMPLEXES IN PASSIVATED SILICON [J].
BERGMAN, K ;
STAVOLA, M ;
PEARTON, SJ ;
LOPATA, J .
PHYSICAL REVIEW B, 1988, 37 (05) :2770-2773
[3]  
DELALAMO JA, 1988, PROPERTIES SILICON, P164
[4]   GENERALIZED-MODEL FOR THE CLUSTERING OF AS DOPANTS IN SI [J].
GUERRERO, E ;
POTZL, H ;
TIELERT, R ;
GRASSERBAUER, M ;
STINGEDER, G .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) :1826-1831
[5]   PHYSICS OF ULTRA-PURE GERMANIUM [J].
HALLER, EE ;
HANSEN, WL ;
GOULDING, FS .
ADVANCES IN PHYSICS, 1981, 30 (01) :93-138
[6]  
JOHNSON NM, 1987, PHYS REV B, V35, P4166, DOI 10.1103/PhysRevB.35.4166
[7]  
JOHNSON NM, 1986, MATER RES SOC S P, V68, P381
[8]  
Kubaschewski O., 1979, METALLURGICAL THERMO
[9]  
PAULING L, 1960, NATURE CHEM BOND, pCH3
[10]   HYDROGEN IN CRYSTALLINE SEMICONDUCTORS [J].
PEARTON, SJ ;
CORBETT, JW ;
SHI, TS .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 43 (03) :153-195