Acceptor 1s-2p± transitions in GaAs/Ga0.7Al0.3As quantum wells:: Effects of spatially dependent screening under electric and magnetic fields

被引：0

作者：

Akbas, H ^{[1
]}

Aktas, S

Okan, SE

Ulas, M

Tomak, M

机构：

[1] Trakya Univ, Dept Phys, TR-22030 Edirne, Turkey

[2] Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1998年 / 205卷 / 02期

关键词：

D O I：

10.1002/(SICI)1521-3951(199802)205:2<537::AID-PSSB537>3.0.CO;2-I

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The valence subband energies in the presence of an electric-field are calculated using the fourth-order Runge-Kutta method. The 1s- and 2p(+/-)-like acceptor states in the presence of a magnetic field are then calculated variationally. The effects of the spatially dependent screening function epsilon(r) on the calculation of the transition energies are specifically investigated. The use of a constant epsilon(o) is shown to yield better agreement with experimental results.

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页码：537 / 542

页数：6

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