One step a-Si:H TFT'S with PECVD SiOxNy gate insulator

被引：0

作者：

Albertin, K. F. ^{[1
]}

Pereyra, I. ^{[1
]}

机构：

[1] Univ Sao Paulo, LME, EPUSP, BR-5424970 Sao Paulo, Brazil

来源：

REVISTA MEXICANA DE FISICA | 2006年 / 52卷 / 02期

关键词：

one mask step; silicon oxynitride; thin film transistors;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Amorphous Silicon thin film transistors (TFT's), utilizingg silicon dioxide (SiO2), silicon oxynitride (SiOxNy) and silicon nitride(Si3N4) obtained by PECVD as gate insulating material, are fabricated through just one masking process and characterized by drain current vs drain voltage and by drain current vs gate voltage (I-ds vs. V-ds, and I-ds vs. V-gs) measurements.

引用

页码：83 / 85

页数：3

共 12 条

[1] Deposition and characterization of silicon oxynitride for integrated optical applications [J].

Alayo, MI ;

Criado, D ;

Gonçalves, LCD ;

Pereyra, I .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2004, 338 :76-80

[2]

ALBERTIN KF, 2003, MATER CHARACT, V5568, P149

[3] AMORPHOUS-SILICON THIN-FILM TRANSISTORS WITH SIOXNY/SINX GATE INSULATORS [J].

HIRANAKA, K ;

YAMAGUCHI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (02) :229-235

[4]

KIM SK, 1995, SOLID STATE PHENOM, V44, P973

[5] Dependence of TFT performance on the dielectric characteristics [J].

Lavareda, G ;

de Carvalho, CN ;

Amaral, A ;

Fortunato, E ;

Ramos, AR ;

da Silva, ME .

THIN SOLID FILMS, 2003, 427 (1-2) :71-76

[6]

LEE K, 1993, SEMICONDUCTOR DEVICE, P509

[7] THE PHYSICS OF AMORPHOUS-SILICON THIN-FILM TRANSISTORS [J].

POWELL, MJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (12) :2753-2763

[8] New challenges in thin film transistor (TFT) research [J].

Schropp, REI ;

Stannowski, B ;

Rath, JK .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2002, 299 :1304-1310

[9]

SIGURD W, 2003, THIN SOLID FILM, V430, P15

[10] Thin-film transistors deposited by hot-wire chemical vapor deposition [J].

Stannowski, B ;

Rath, JK ;

Schropp, REI .

THIN SOLID FILMS, 2003, 430 (1-2) :220-225

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