Intermittent electroless nickel deposition in a fine trench flip chip bump pad

被引：6
|
作者：
Lin, KL [1 ]
Chen, CL [1 ]
机构：
[1] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 701, Taiwan
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2000年 / 147卷 / 07期
关键词：
D O I：
10.1149/1.1393575
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
An intermittent electroless nickel deposition process was examined which involved periodically removing and reinserting the silicon wafer in the deposition bath. this process results in electroless nickel deposits with a smooth surface appearance and uniform thickness within the bump opening. The intermittent deposition process also results in enhancement in deposition speed. The benefits of this process are ascribed to replenishment of the surface concentration and the breakdown of entrapped gas bubble in the trench area of bump pad. (C) 2000 The Electrochemical Society.
引用
收藏
页码：2604 / 2606
页数：3
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