3D integration technology using W2W direct bonding and TSV for CMOS based image sensors

被引：0

作者：

Pham, Nga. P. ^{[1
]}

Tutunjyan, Nina ^{[1
]}

Volkaerts, Danny ^{[1
]}

Peng, Lan ^{[1
]}

Jamison, Geraldine ^{[1
]}

Tezcan, Deniz Sabuncuoglu ^{[1
]}

机构：

[1] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

来源：

2015 IEEE 17TH ELECTRONICS PACKAGING AND TECHNOLOGY CONFERENCE (EPTC) | 2015年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a 3D integration technology for imager application using wafer level permanent oxide to oxide bonding and TSV process for backside illuminated (BSI) CMOS image sensor (CIS). The process allows the stacking and electrical connection of two chips-illuminated imager chip on top of a readout and image processing chip by mean of a via last style TSV.

引用

页数：5