Raman scattering study of GeTe and Ge2Sb2Te5 phase-change materials

被引:184
作者
Andrikopoulos, K. S. [1 ]
Yannopoulos, S. N.
Kolobov, A. V.
Fons, P.
Tominaga, J.
机构
[1] Aristotle Univ Thessaloniki, Sch Technol, Div Phys, GR-54121 Thessaloniki, Greece
[2] FORTH, Inst Chem Engn & High Temp Chem Proc, GR-26504 Patras, Greece
[3] Univ Montpellier 2, Lab Physicochim Mat Condensee, CNRS, UMR 5617, F-34095 Montpellier 5, France
[4] Natl Inst Adv Ind Sci & Technol, Ctr Appl Near Field Opt Res, Tsukuba, Ibaraki 3058562, Japan
关键词
amorphous materials; chalcogenides; Raman spectroscopy; phase transitions;
D O I
10.1016/j.jpcs.2007.02.027
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Structural details of the amorphous binary GeTe and ternary Ge2Sb2Te5 (GST) phase-change materials are investigated with the aid of Raman scattering. In the case of the a-GeTe, a plethora of Raman bands have been recorded and assigned on the basis of a network structure. consisting of corner- and edge-sharing tetrahedra of the type GeTe4-nGen (n = 0, 1, 2, 3, 4). Significant temperature-induced structural changes take place in this material even at temperatures well below the crystallization temperature. These changes tend to organize the local structure, in particular the coordination number of Ge atoms, so as to facilitate the amorphous-to-crystal transformation. The much simpler Raman spectrum of GST, characterized by one vibrational band, is accounted for by the dominance of the Sb2T3 component in Raman scattering; reasons about this explanation, as well as for the lack of any Te-Te bonds are briefly described. (c) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1074 / 1078
页数:5
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