On the bipolar transistor collector current at the onset of base-widening as a function of the collector-base voltage

被引:2
作者
Karmalkar, S [1 ]
机构
[1] Indian Inst Technol, Dept Elect Engn, Madras 600036, Tamil Nadu, India
关键词
bipolar transistor; analytical modeling; base-widening effects;
D O I
10.1016/S0038-1101(02)00499-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Supported by experiment, we establish the following for the current flow across the epitaxial collector layer of a bipolar transistor biased at the onset of base-widening effects. The flow is one-dimensional only for large collector-base voltages, when it is space-charge limited and velocity saturated. As the collector-base voltage is lowered and the device enters quasi-saturation, the flow spreads progressively. The variation of the collector current with collector-base voltage, taking into account current spreading effects, is well modeled by a simple saturating exponential function with physically based constants. (C) 2003 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:951 / 955
页数:5
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