Narrow photoluminescence from 1.3 μm InAs/GaAs quantum dots

被引：0
|
作者：
Jang, YD [1 ]
Yim, JS
Kim, NJ
Lee, D
Jang, JW
Park, KH
Jeong, WG
Oh, DK
机构：
[1] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea
[2] Sungkyunkwan Univ, Dept Mat Engn, Suwon 440746, South Korea
[3] Elect & Telecommun Res Inst, Taejon 305350, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2003年 / 42卷
关键词：
InAsN; quantum dot; photoluminescence;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
InAs/GaAs quantum dots containing a small amount of nitrogen emit strong and narrow photoluminescence at 1.3 mum. The time-resolved photoluminescence study shows that the nitrogen incorporation into InAs quantum dots does not increase the defect density.
引用
收藏
页码：S393 / S394
页数：2
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