Narrow photoluminescence from 1.3 μm InAs/GaAs quantum dots

被引：0

作者：

Jang, YD ^{[1
]}

Yim, JS

Kim, NJ

Lee, D

Jang, JW

Park, KH

Jeong, WG

Oh, DK

机构：

[1] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea

[2] Sungkyunkwan Univ, Dept Mat Engn, Suwon 440746, South Korea

[3] Elect & Telecommun Res Inst, Taejon 305350, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2003年 / 42卷

关键词：

InAsN; quantum dot; photoluminescence;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

InAs/GaAs quantum dots containing a small amount of nitrogen emit strong and narrow photoluminescence at 1.3 mum. The time-resolved photoluminescence study shows that the nitrogen incorporation into InAs quantum dots does not increase the defect density.

引用

页码：S393 / S394

页数：2

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