Electronic band structure of (001)-semiconductor surfaces:: the frontier-induced semi-infinite-medium states

被引:0
作者
Olguín, D [1 ]
Baquero, R [1 ]
机构
[1] Inst Politecn Nacl, Dept Fis, Ctr Invest & Estudios Avanzados, Mexico City 07300, DF, Mexico
关键词
electronic states; surface resonances; tight-binding method;
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In previous work we have discussed the valence band electronic structure of the (001) oriented semi-infinite medium of the II-VI Wide band gap zinc-blende semiconductor compounds. We have found three characteristic surface resonances besides the known bulk bands (heavy hole, light hole and spin-orbit bands). Two of these resonances correspond to the anion-terminated surface and the third one to the cation terminated surface. Furthermore, we have shown that three non dispersive (001)-surface-induced bulk states, in the Gamma - K direction of the 2D Brillouin zone, are also characteristic of these systems. To identify these states from other known surface states, we have called them frontier-induced semi-infinite-medium states. In order to continue with the description of these systems, we review the main characteristics of the electronic structure of the (001)-surfaces And we present a detailed theoretical discussion of the frontier-induced semi-infinite-medium states. We use tight binding Hamiltonians and the well-known Surface Green's Function Matching method to calculate the electronic surface band structure.
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页码:1 / 5
页数:5
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