High-performance near-infrared polymeric phototransistors realized by combining cross-linked polymeric semiconductors and bulk heterojunction bilayer structures

被引：20

作者：

Li, Qingyuan ^{[1
,2
]}

Ran, Yang ^{[1
,2
]}

Shi, Wei ^{[1
]}

Qin, Mingcong ^{[1
,2
]}

Sun, Yunlong ^{[1
,2
]}

Kuang, Junhua ^{[1
,2
]}

Wang, Hanlin ^{[1
]}

Chen, Huajie ^{[3
]}

Guo, Yunlong ^{[1
,2
]}

Liu, Yunqi ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, CAS Key Lab Organ Solids, Beijing 100190, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] Xiangtan Univ, Coll Chem, Key Lab Environmentally Friendly Chem & Applicat, Minist Educ,Key Lab Green Organ Synth & Applicat, Xiangtan 411105, Peoples R China

来源：

APPLIED MATERIALS TODAY | 2021年 / 22卷

基金：

中国国家自然科学基金;

关键词：

Cross-linked polymeric semiconductors; Solution-processable bilayer heterostructures; Flexible polymeric phototransistors; Near-infrared photodetectors; FIELD-EFFECT TRANSISTORS; HIGH-MOBILITY; SENSITIVITY; DESIGN; COPOLYMER; AMBIPOLAR;

D O I：

10.1016/j.apmt.2020.100899

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Flexible polymeric phototransistors highly responsive to near-infrared (NIR) light are crucial for the room temperature biological imaging due to some unique properties of organic semiconductors, such as light weight, low cost, and good biocompatibility. However, the low mobility and/or the high dark off-current (DOC) of low-bandgap polymeric phototransistors limit their NIR light detectability. This work proposes the development of a solution-processable bilayer heterostructure (BHS) for polymeric phototransistors, which uses cross-linked polymeric semiconductors (CLPS) as the bottom conducting channel and a bulk heterojunction (BHJ) as the photoactive layer. The BHS architecture ensures fast carrier transport and efficient exciton separation. Besides, the electron-trapping effect generated between the CLPS and BHJ results in a significantly lower DOC compared with other controlled devices. Thus, the BHS phototransistor based on low-bandgap polymer can detect NIR light with wavelengths of 808 nm, 1064 nm, and even 1550 nm, going from NIR-I (750-1000 nm) to NIR-II (1000-1700 nm). Meanwhile, its responsivity (R) is two or three orders of magnitude higher than the controlled device. Furthermore, an ultra-flexible NIR phototransistor array (similar to 5 mu m thick) using this strategy could detect image barcodes with different gray levels, demonstrating its potential application in flexible NIR imaging. (C) 2020 Elsevier Ltd. All rights reserved.

引用

页数：8

共 46 条

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