High-quality and highly-transparent AlN template on annealed sputter-deposited AlN buffer layer for deep ultra-violet light-emitting diodes

被引：52

作者：

Huang, Chia-Yen ^{[1
,2
]}

Wu, Pei-Yu ^{[3
]}

Chang, Kai-Shiang ^{[1
,2
]}

Lin, Yun-Hsiang ^{[4
]}

Peng, Wei-Chih ^{[4
]}

Chang, Yem-Yeu ^{[5
]}

Li, Jui-Ping ^{[5
]}

Yen, Hung-Wei ^{[6
]}

Wu, YewChung Sermon ^{[3
]}

Miyake, Hideto ^{[7
]}

Kuo, Hao-Chung ^{[1
,2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, 1001 Ta Hsueh Rd, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt Engn, 1001 Ta Hsueh Rd, Hsinchu 300, Taiwan

[3] Natl Chiao Tung Univ, Dept Mat Sci & Engn, 1001 Ta Hsueh Rd, Hsinchu 300, Taiwan

[4] Epistar Corp, Res & Dev Ctr, 21 Li Hsin Rd,Hsinchu Sci Pk, Hsinchu 300, Taiwan

[5] Crystalwise Technol Inc, Adv Technol Dev Div, 8 Ke Bei 5th Rd,Jhunan Sci Pk, Miaoli 35053, Taiwan

[6] Natl Chiao Tung Univ, Dept Mat Sci & Engn, 1,Sec 4,Roosevelt Rd, Taipei 10617, Taiwan

[7] Mie Univ, Dept Elect & Elect Engn, 1577 Kurimamachiya, Tsu, Mie 5148507, Japan

来源：

AIP ADVANCES | 2017年 / 7卷 / 05期

关键词：

GROWTH MODE MODIFICATION; OPTICAL-PROPERTIES; NUCLEATION LAYER; SAPPHIRE; TEMPERATURE; ALGAN; GAN; EPITAXY; MOCVD; FILMS;

D O I：

10.1063/1.4983708

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A high-quality and highly-transparent AlN template was prepared by regrowth on a sputter-deposited AlN buffer layer. The buffer layer was thermally annealed and then underwent AlN regrowth in metalorganic chemical vapor deposition (MOCVD). The peakwidth of (002) and (102) plane x-ray rocking curve was 104 arcsec and 290 arcsec, respectively, indicating a threading dislocation density <5.0 x 10(8) cm(-2). Dislocations were reduced via grain growth and morphological evolution. The absence of carbon impurity source in sputter deposition also resulted in an improved transparency. According to transmission and reflection measurements, the absorption rate of lambda=280 nm emission propagating through the template was less than 6%. (C) 2017 Author(s).

引用

页数：6

共 24 条

[1] Reduction of threading dislocation densities in AlN/sapphire epilayers driven by growth mode modification [J].