Over 100 A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage

被引：134

作者：

Kambayashi, Hiroshi ^{[1
]}

Satoh, Yoshihiro ^{[1
]}

Ootomo, Shinya ^{[2
]}

Kokawa, Takuya ^{[1
]}

Nomura, Takehiko ^{[1
]}

Kato, Sadahiro ^{[1
]}

Chow, Tat-sing Pawl ^{[3
]}

机构：

[1] Adv Power Device Res Assoc, Nishi Ku, Yokohama, Kanagawa 2200073, Japan

[2] Furukawa Elect Corp Ltd, Yokohama R&D Labs, Nishi Ku, Yokohama, Kanagawa 2200073, Japan

[3] Rensselaer Polytech Inst, Ctr Integrated Elect, Troy, NY 12180 USA

来源：

SOLID-STATE ELECTRONICS | 2010年 / 54卷 / 06期

关键词：

Normally-off; Gallium Nitride; Heterojunction field-effect transistor (WET); MOS; Over 100 A operation; FIELD-EFFECT TRANSISTORS; CHANNEL GAN MOSFETS; HEMT;

D O I：

10.1016/j.sse.2010.01.001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The demonstration of a normally-off n-channel AlGaN/GaN hybrid metal-oxide-semiconductor heterojunction field-effect transistor (MOS-HFET) on Si substrate for large-current operation is reported. The AlGaN/GaN hybrid MOS-HFET has the merits of both a MOS channel and an AlGaN/GaN heterostructure with high mobility two dimensional electron gases (2DEG). The maximum drain current of over 100 A with 2 mu m channel length and 340 mm channel width is performed. This is the best value for a normally-off GaN-based field-effect transistor. The specific on-state resistance is 9.3 m Omega cm(2). The fabricated device also exhibits good normally-off operation with the threshold voltage of 2.7 V and the breakdown voltage of over 600 V. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：660 / 664

页数：5

共 20 条

[1] WIDE BANDGAP COMPOUND SEMICONDUCTORS FOR SUPERIOR HIGH-VOLTAGE UNIPOLAR POWER DEVICES [J].

CHOW, TP ;

TYAGI, R .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (08) :1481-1483

[2]

Huang W, 2008, INT SYM POW SEMICOND, P295

[3] Enhancement-mode n-channel GaN MOSFETs on p-and n-GaN/sapphire substrates [J].

Huang, W. ;

Khan, T. ;

Chow, T. P. .

IEEE ELECTRON DEVICE LETTERS, 2006, 27 (10) :796-798

[4]

Ikeda N, 2008, INT SYM POW SEMICOND, P287

[5] Over 55 A, 800 V high power AlGaN/GaN HFETs for power switching application [J].

Ikeda, Nariaki ;

Kato, Kazuo ;

Kondoh, Kazuo ;

Kambayashi, Hiroshi ;

Li, Jiang ;

Yoshida, Seikoh .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (06) :2028-2031

[6] C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE [J].

Kato, Sadahiro ;

Satoh, Yoshihiro ;

Sasaki, Hitoshi ;

Masayuki, Iwami ;

Yoshida, Seikoh .

JOURNAL OF CRYSTAL GROWTH, 2007, 298 :831-834

[7] GaN-Based trench gate metal oxide semiconductor field-effect transistor fabricated with novel wet etching [J].

Kodama, Masahito ;

Sugimoto, Masahiro ;

Hayashi, Eiko ;

Soejima, Narumasa ;

Ishiguro, Osamu ;

Kanechika, Masakazu ;

Itoh, Kenji ;

Ueda, Hiroyuki ;

Uesugi, Tsutomu ;

Kachi, Tetsu .

APPLIED PHYSICS EXPRESS, 2008, 1 (02)

[8] AlGaN/GaN HEMTs on SiC with over 100 GHz fT and low microwave noise [J].

Lu, W ;

Yang, JW ;

Khan, MA ;

Adesida, I .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (03) :581-585

[9] High-voltage normally off GaN MOSFETs on sapphire substrates [J].

Matocha, K ;

Gutmann, RJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (01) :6-10

[10] Over 2A operation at 250°C of GaN metal-oxide-semiconductor field effect transistors on sapphire substrates [J].

Niiyama, Yuki ;

Kambayashi, Hiroshi ;

Ootomo, Shinya ;

Nomura, Takehiko ;

Yoshida, Seikoh ;

Chow, Tat-sing Paul .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (09) :7128-7130

← 1 2 →