Growth process analysis of a-Si1-xNx:H films probed by X-ray reflectivity

被引：6
作者：
Bontempi, E
Depero, LE
Sangaletti, L
Giorgis, F
Pirri, CF
机构：
[1] Univ Cattolica Sacro Cuore, Ist Nazl Fis Mat, I-25121 Brescia, Italy
[2] Univ Cattolica Sacro Cuore, Dipartimento Matemat & Fis, I-25121 Brescia, Italy
[3] Univ Brescia, Ist Nazl Fis Mat, Dipartimento Ingn Meccan, Struct Chem Lab, I-25123 Brescia, Italy
[4] Politecn Torino, Dipartimento Fis, I-10129 Turin, Italy
[5] Politecn Torino, Ist Nazl Fis Mat, I-10129 Turin, Italy
来源：
MATERIALS CHEMISTRY AND PHYSICS | 2000年 / 66卷 / 2-3期
关键词：
X-ray reflectivity (XRR); plasma-enhanced chemical vapor deposition (PECVD); silicon nitride; alloys; light-emitting devices (LED);
D O I：
10.1016/S0254-0584(00)00338-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Amorphous silicon-nitrogen (a-Si1-xNx:H) alloys deposited by ultra high vacuum plasma-enhanced chemical vapor deposition (PECVD) have been characterized by X-ray reflectivity (XRR) measurements in order to investigate their structural properties. From the analysis of XRR data, the thickness, density, interface and surface roughness of the films have been evaluated. (C) 2000 Elsevier Science S.A. All rights reserved.
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收藏
页码：172 / 176
页数：5
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