Self-assembly of perylenediimide based semiconductor on polymer substrate

被引:24
|
作者
Wiatrowski, Michal [1 ]
Dobruchowska, Ewa [1 ]
Maniukiewicz, Waldemar [2 ]
Pietsch, Ulrich [3 ]
Kowalski, Jacek [4 ]
Szamel, Zbigniew [1 ]
Ulanski, Jacek [1 ]
机构
[1] Tech Univ Lodz, Dept Mol Phys, PL-90924 Lodz, Poland
[2] Tech Univ Lodz, Inst Gen & Ecol Chem, PL-90924 Lodz, Poland
[3] Univ Siegen, D-57068 Siegen, Germany
[4] Tech Univ Lodz, Fac Mech Engn, Div Nonmetall Mat, PL-90924 Lodz, Poland
关键词
Perylenediimide; Self-assembly; pi-pi stacking; Ordered crystalline layer; Conductivity; X-ray diffraction; Scanning electron microscopy; THIN-FILM TRANSISTORS; REGIOREGULAR POLY(3-HEXYL THIOPHENE); CRYSTALLINE NETWORKS; MOLECULAR-WEIGHT; LAYER; CONDUCTIVITY; SUBSTITUENTS; TEMPERATURE; TRANSITIONS; MORPHOLOGY;
D O I
10.1016/j.tsf.2009.08.037
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The continuous bi-layer composites consisting of top, ordered crystalline layer of perylenediimide derivative (2,9-di(pent-3-yl)-anthra[,1,9-def.6,5,10-d'e'f']diisoquinoline-1,3,8,10-tetrone) - PTCDI-C5(3) and bottom poly(3-hexylthiophene-2,5-diyl) (P3HT) support were obtained from one solution, with a use of so called "two-step reticulate doping" method. Optical, atomic force and scanning electron microscopy images show that the top crystalline layer is made of relatively large, anisotropic domains composed of long, parallel crystals. The crystalline character of the surface layer of PTCDI-C5(3) grown on the P3HT film was confirmed by wide angle X-ray scattering measurements. Furthermore, the grazing-incidence angle X-ray diffraction experiments revealed that the self-assembly of PTCDI-C5(3) molecules on P3HT is dominated by pi-pi interaction between the conjugated perylene cores, and the stacks are parallel to the long axis of the crystals and to the polymer surface. The surface conductivity, measured along the long axis of the crystals was estimated to be ca. 2.4 10(-8)Omega(-1) square(-1) at 285 K. Temperature dependence of the conductivity in the range 140-285 K reveal semiconductor-like behaviour with activation energy ca. 150 meV. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:2266 / 2270
页数:5
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