Formation and decay of metastable Ge clusters on Ge(001)

被引:29
作者
Galea, TM
Ordas, C
Zoethout, E
Zandvliet, HJW
Poelsema, B
机构
[1] Univ Twente, Dept Appl Phys, NL-7500 AE Enschede, Netherlands
[2] Univ Twente, MESA & Res Inst, NL-7500 AE Enschede, Netherlands
来源
PHYSICAL REVIEW B | 2000年 / 62卷 / 11期
关键词
D O I
10.1103/PhysRevB.62.7206
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The initial stages of room temperature homoepitaxial growth of Ge(001) have been studied with scanning tunneling microscopy. The smallest entities observed after deposition are dimers. Several different adsorption sites for the dimers have been identified. We have observed three different diffusion pathways for these adsorbed dimers at room temperature: two along and one across the substrate dimer rows. As well as the isolated dimers. metastable dimer clusters and epitaxial islands are observed. The metastable dimer clusters always consist of chains of trough dimers oriented along a [130] direction and have a profound influence on the buckling registry of the Ge(001) substrate. At room temperature the metastable dimer clusters show limited mobility. By stz itching a terminating (tail) or middle (body) dimer between equivalent positions the cluster can change its shape. The metastable dimer clusters eventually convert to epitaxial islands. Based on the experimental observations, a pathway for this conversion process is proposed.
引用
收藏
页码:7206 / 7212
页数:7
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