Molecular beam epitaxial growth of high-quality InP/InGaAs/InP heterostructure with polycrystalline GaAs and GaP decomposition sources

A high-quality InP/InGaAs/InP double heterostructure was grown by molecular beam epitaxy (MBE) with polycrystalline GaAs and GaP decomposition sources for group V elements. By rapidly changing the cell temperature of GaAs and GaP decomposition sources during the growth switching period from InP to InGaAs and vice versa, a parasitic contamination-free InP/InGaAs/InP double heterostructure was obtained. The photoluminescence linewidths are 4.8 meV at 9 K for InGaAs on InP, and 1.76 meV at 9 K for InP on InGaAs, The X-ray rocking curve linewidth of InGaAs is as low as 20 arcsec without side lobes. These photoluminescence (PL) and X-ray measurement results are comparable to the best MBE data ever reported. Secondary ion mass spectroscopy depth profiles indicate that the contaminations due to the memory effect of group V elements are suppressed below 3 orders of magnitude and the parasitic gallium incorporation from polycrystalline GaAs decomposition sources is below 5 orders of magnitude, which are the best results obtained by MBE so far.