Low-frequency noise in strained SiGe core-shell nanowire p-channel field effect transistors

被引：26

作者：

Jang, Doyoung ^{[1
,2
]}

Lee, Jae Woo ^{[1
,2
]}

Tachi, Kiichi ^{[1
,3
,4
]}

Montes, Laurent ^{[1
]}

Ernst, Thomas ^{[3
]}

Kim, Gyu Tae ^{[2
]}

Ghibaudo, Gerard ^{[1
]}

机构：

[1] Grenoble INP MINATEC, IMEP LAHC, F-38016 Grenoble, France

[2] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea

[3] MINATEC, CEA LETI, F-38054 Grenoble 9, France

[4] Tokyo Inst Technol, Frontier Res Ctr, Yokohama, Kanagawa 2268502, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 07期

关键词：

Ge-Si alloys; hole mobility; hole traps; MOSFET; nanoelectronics; nanowires; semiconductor device noise; semiconductor materials; semiconductor quantum wires; surface roughness; 1/F NOISE; MOSFETS; HFO2; MOS;

D O I：

10.1063/1.3480424

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-frequency noise has been studied in compressively strained Si0.8Ge0.2 core-shell nanowire (NW) p-channel transistors compared with unstrained NWs. The noise has been well interpreted using the carrier number with correlated mobility fluctuation model. The volume trap density, N-t, lies in the range of 2.9x10(18)-4.3x10(19) cm(-3) eV(-1), which is similar to standard high-k planar devices. The impact of Coulomb and surface roughness scatterings is more significant in unstrained SiGe NWs. This result can be explained by the better carrier confinement at the central region of SiGe NWs due to the additional band offset in the compressively strained NWs. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3480424]

引用

页数：3

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