AlGaN deep ultraviolet LEDs on bulk AIN substrates

被引：29

作者：

Ren, Zaiyuan

Sun, Q.

Kwon, S. -Y.

Han, J. ^{[1
]}

Davitt, K. ^{[2
]}

Song, Y. K. ^{[2
]}

Nurmikko, A. V. ^{[2
]}

Liu, W.

Smart, J. ^{[3
]}

Schowalter, L. ^{[3
]}

机构：

[1] Yale Univ, Dept Elect Engn, 15 Prospect St, New Haven, CT 06520 USA

[2] Brown Univ, Div Engn, Providence, RI 01219 USA

[3] Crystal IS Inc, Green Island 12183, NY USA

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007 | 2007年 / 4卷 / 07期

关键词：

D O I：

10.1002/pssc.200674758

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report the growth of sub-300 nm ultraviolet light emitting diodes (UV LEDs) on bulk AlN substrates. Heteroepitaxial evolution study through interrupted growth experiments revealed that AlxGa1-xN (x > 0.5) epilayers can be grown pseudomorphically with well-defined step-flow growth mode below a certain critical thickness. The build-up of compressive strain energy eventually induces a morphological roughening followed by the admission of misfit dislocations. LEDs grown on bulk AlN substrates exhibit noticable improvement over those on sapphire in device impedance, efficiency and thermal characteristics under high-level injection, pointing to a promising substrate platform for high performance III-nitride ultraviolet optoelectronics. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2482 / +

页数：2

共 12 条

[11] Anisotropic step-flow growth and island growth of GaN(0001) by molecular beam epitaxy [J].