Partial sulfurization of laser-ablated titanium oxide film for the improvement in photocatalytic property

被引：4

作者：

Nakamura, T ^{[1
]}

Arata, M

Takahashi, H

Yamamoto, K

Sato, N

Muramatsu, A

Matsubara, E

机构：

[1] Tohoku Univ, Grad Sch Engn, Dept Mat Sci, Sendai, Miyagi 9808579, Japan

[2] Tohoku Univ, Former Grad Sch Engn, Dept Quantum Sci & Energy Engn, Sendai, Miyagi 9808579, Japan

[3] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Sendai, Miyagi 9808577, Japan

[4] Tohoku Univ, Mat Res Inst, Sendai, Miyagi 9808577, Japan

来源：

MATERIALS TRANSACTIONS | 2003年 / 44卷 / 04期

关键词：

photocatalysis; titanium oxide; pulsed laser deposition (PLD); grazing incidence X-ray scattering (GIXS); sulfurization;

D O I：

10.2320/matertrans.44.685

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photocatalytic titanium oxide (TiO2) thin films were prepared on quartz substrate by the pulsed laser deposition using Nd:YAG (lambda = 1.064 mum) pulse laser. Subsequently, the films were sulfurized in H2S or CS2 atmosphere under various conditions. After the sulfurization of the film in H2S or CS2 at 1273 K for I h, the surface morphology and structure of the deposited TiO2 film were changed. The photocatalytic property of the film might be improved by the sulfurization using CS2 at the temperatures lower than 1273 K.

引用

页码：685 / 687

页数：3

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