Multisubband Monte Carlo study of transport, quantization, and electron-gas degeneration in ultrathin SOI n-MOSFETs

被引：81

作者：

Lucci, Luca

Palestri, Pierpaolo

Esseni, David

Bergagnini, Lorenzo

Selmi, Luca

机构：

[1] Dipartimento di Ingegneria Elettrica, Gestionale, e Meccanica, University of Udine

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2007年 / 54卷 / 05期

关键词：

back-scattering; ballistic transport; Monte Carlo (MC) method; MOSFETs; scattering; semiconductor device modeling; silicon-on-insulator (SOI);

D O I：

10.1109/TED.2007.894606

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a new self-consistent multisubband Monte Carlo model for electronic transport in the inversion layer of decananometric MOSFETs. The simulator is 2-D in real space and in (k) over right arrow -space and accounts for the electron-gas degeneracy in the (k) over right arrow -space. Simulation of nanoscale ultra-thin-body silicon-on-insulator MOSFETs shows that the subband structure and the carrier degeneracy strongly affect the transport properties and, in particular, the injection velocity and the channel back-scattering.

引用

收藏

页码：1156 / 1164

页数：9

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