Quenching mechanism of luminescence in Sm-doped ZnS

被引：3

作者：

Maruyama, T

Yamada, H

Mochizuki, T

Akimoto, K

Yagi, E

机构：

[1] Univ Tsukuba, Inst Phys Appl, Tsukuba, Ibaraki 3058573, Japan

[2] RIKEN, Inst Phys & Chem Res, Wako, Saitama 3510198, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 214卷

关键词：

molecular-beam epitaxy; rare earth; wide band gap; RBS;

D O I：

10.1016/S0022-0248(00)00265-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The quenching mechanism of luminescence by heavy Sm doping in ZnS was investigated by the Rutherford backscattering ion channeling (RBS/C) method. Red luminescence around 650 nm due to the 4f intra transition of Sm3+ ion was observed in the Sm-doped ZnS, and the emission intensity becomes maximum at an Sm concentration of about 2 x 10(19) cm(-3). The RBS/C measurements showed a much shallower dip in the angular profile of Sm yields and a shallower and broader Zn-dip in the heavily Sm-doped ZnS than those in the moderately Sm-doped sample. These results indicate that the quenching of the luminescence by heavy doping of Sm is caused by the deterioration of the structural quality of ZnS and the large displacement of Sm atoms from the lattice sites. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：954 / 957

页数：4

共 4 条

[1] Concentration quenching of the Eu3+-activated luminescence in some layered perovskites with two-dimensional arrangement [J].