Modeling BJT radiation response with non-uniform energy distributions of interface traps

被引：13
作者：
Barnaby, HJ
Cirba, C
Schrimpf, RD
Kosier, SL
Fouillat, P
Montagner, X
机构：
[1] Vanderbilt Univ, Dept ECE, Nashville, TN 37232 USA
[2] VTC Inc, Bloomington, MN 55425 USA
[3] Univ Bordeaux 1, CNRS, UMR5818, Lab IXL, F-33405 Talence, France
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2000年 / 47卷 / 03期
关键词：
D O I：
10.1109/23.856473
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Radiation-induced oxide defects that degrade electrical characteristics of BJTs can be measured with the use of gated diodes. The buildup of defects and their effect on device radiation response are modeled with computer simulation.
引用
收藏
页码：514 / 518
页数：5
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