Noise-optimized silicon radiometers

被引:13
作者
Eppeldauer, GP [1 ]
机构
[1] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA
关键词
chopped radiation; gain; noise; photocurrent; radiometer; sensitivity; silicon photodiodes;
D O I
10.6028/jres.105.027
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
This paper describes a new, experimentally verified, noise analysis and the design considerations of the dynamic characteristics of silicon radiometers. Transimpedance gain, loop gain, and voltage gain were optimized versus frequency for photodiode current meters measuring ac and de optical radiation. Silicon radiometers with improved dynamic characteristics were built and tested. The frequency-dependent photocurrent gains were measured. The noise floor was optimized in an ac measurement mode using photodiodes of different shunt resistance and operational amplifiers with low l/f voltage and current noise. In the dark (without any signal), the noise floor of the optimized silicon radiometers was dominated by the Johnson noise of the source resistance. The Johnson noise was decreased and equalized to the amplified l/f input noise at a 9 Hz chopping frequency and 30 s integration time constant, resulting in an equivalent root-mean-square (rms) photocurrent noise of 8 x 10(-17) A. The lowest noise floor of 5 x 10(-17) A, equal to a noise equivalent power (NEP) of 1.4 x 10(-16) W at the 730 nm peak responsivity, was obtained at a 100 s integration time constant. The radiometers, optimized for ac measurements, were tested in a de measurement mode as well. Performances in ac and de measurement modes were compared. In the ac mode, a ten times shorter (40 s) overall measurement time was needed than in the de mode (400 s) to obtain the same 10(-16) A noise floor.
引用
收藏
页码:209 / 219
页数:11
相关论文
共 14 条
  • [1] *BURRBR CORP, 1984, PROD DAT BOOK BURRBR, P1
  • [2] Electronic characteristics of Ge and InGaAs radiometers
    Eppeldauer, G
    [J]. INFRARED TECHNOLOGY AND APPLICATIONS XXIII, PTS 1 AND 2, 1997, 3061 : 833 - 838
  • [3] 14-DECADE PHOTOCURRENT MEASUREMENTS WITH LARGE-AREA SILICON PHOTODIODES AT ROOM-TEMPERATURE
    EPPELDAUER, G
    HARDIS, JE
    [J]. APPLIED OPTICS, 1991, 30 (22): : 3091 - 3099
  • [4] Chopped radiation measurements with large area Si photodiodes
    Eppeldauer, G
    [J]. JOURNAL OF RESEARCH OF THE NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY, 1998, 103 (02) : 153 - 162
  • [5] EPPELDAUER G, 1991, SPIE P, V1479, P71
  • [6] EPPELDAUER G, 1988, 2 WORKSH IMPR PHOT G, P111
  • [7] EPPELDAUER G, 1984, 11 INT S PHOT DET WE
  • [8] InSb working standard radiometers
    Eppeldauer, GP
    Migdall, AL
    Hanssen, LM
    [J]. METROLOGIA, 1998, 35 (04) : 485 - 490
  • [9] Friedrich R., 1995, METROLOGIA, V32, P509
  • [10] Graeme J. G., 1996, Photodiode Amplifiers. Op Amp Solutions