A 176-Stacked 512Gb 3b/Cell 3D-NAND Flash with 10.8Gb/mm2 Density with a Peripheral Circuit Under Cell Array Architecture

被引：47

作者：

Park, Jae-Woo ^{[1
]}

Kim, Doogon ^{[1
]}

Ok, Sunghwa ^{[1
]}

Park, Jaebeom ^{[1
]}

Kwon, Taeheui ^{[1
]}

Lee, Hyunsoo ^{[1
]}

Lim, Sungmook ^{[1
]}

Jung, Sun-Young ^{[1
]}

Choi, Hyeongjin ^{[1
]}

Kang, Taikyu ^{[1
]}

Park, Gwan ^{[1
]}

Yang, Chul-Woo ^{[1
]}

Choi, Jeong-Gil ^{[1
]}

Ko, Gwihan ^{[1
]}

Shin, Jaehyeon ^{[1
]}

Yang, Ingon ^{[1
]}

Nam, Junghoon ^{[1
]}

Sohn, Hyeokchan ^{[1
]}

Hong, Seok-In ^{[1
]}

Jeong, Yohan ^{[1
]}

Choi, Sung-Wook ^{[1
]}

Choi, Changwoon ^{[1
]}

Shin, Hyun-Soo ^{[1
]}

Lim, Junyoun ^{[1
]}

Youn, Dongkyu ^{[1
]}

Nam, Sanghyuk ^{[1
]}

Lee, Juyeab ^{[1
]}

Ahn, Myungkyu ^{[1
]}

Lee, Hoseok ^{[1
]}

Lee, Seungpil ^{[1
]}

Park, Jongmin ^{[1
]}

Gwon, Kichang ^{[1
]}

Jeong, Woopyo ^{[1
]}

Choi, Jungdal ^{[1
]}

Kim, Jinkook ^{[1
]}

Jin, Kyo-Won ^{[1
]}

机构：

[1] SK Hynix Semicond, Ichon, South Korea

来源：

2021 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC) | 2021年 / 64卷

关键词：

D O I：

10.1109/ISSCC42613.2021.9365809

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：422 / 423

页数：2

共 4 条

[1] A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate [J].

Jeong, Woopyo ;

Im, Jae-Woo ;

Kim, Doo-Hyun ;

Nam, Sang-Wan ;

Shim, Dong-Kyo ;

Choi, Myung-Hoon ;

Yoon, Hyun-Jun ;

Kim, Dae-Han ;

Kim, You-Se ;

Park, Hyun-Wook ;

Kwak, Dong-Hun ;

Park, Sang-Won ;

Yoon, Seok-Min ;

Hahn, Wook-Ghee ;

Ryu, Jin-Ho ;

Shim, Sang-Won ;

Kang, Kyung-Tae ;

Ihm, Jeong-Don ;

Kim, In-Mo ;

Lee, Doo-Sub ;

Cho, Ji-Ho ;

Kim, Moo-Sung ;

Jang, Jae-Hoon ;

Hwang, Sang-Won ;

Byeon, Dae-Seok ;

Yang, Hyang-Ja ;

Park, Kitae ;

Kyung, Kye-Hyun ;

Choi, Jeong-Hyuk .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2016, 51 (01) :204-212

[2]

Kang D., 2017, IEEE JSSC, V52, P204

[3]

Sam-Kyu Won, 2011, 2011 IEEE Asian Solid-State Circuits Conference, P169, DOI 10.1109/ASSCC.2011.6123629

[4]

Siau C, 2019, ISSCC DIG TECH PAP I, V62, P218, DOI 10.1109/ISSCC.2019.8662445

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