Layer structure of textured CaBi4Ti4O15 ceramics fabricated by slip casting in high magnetic field

被引:17
作者
Kimura, Masahiko [1 ]
Shiratsuyu, Kosuke
Ando, Akira
Suzuki, Tohru S.
Sakka, Yoshio
机构
[1] Murata Mfg Co Ltd, Kyoto 6178555, Japan
[2] Natl Inst Mat Sci, Nano Ceram Ctr, Tsukuba, Ibaraki 3050047, Japan
关键词
D O I
10.1111/j.1551-2916.2007.01579.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Textured CaBi4Ti4O15 (CBT) ceramics were fabricated by slip casting in a high magnetic field of 12 T, and a layer structure was obtained by co-firing with the textured CBT ceramics and a metal internal electrode. The crystalline a(b)-axis of CBT was aligned parallel to the magnetic field, and highly a(b)-axis textured ceramics were obtained. The orientation degree of the textured ceramics was 0.82, and the electromechanical coupling coefficient of thickness extensional (TE) vibration was about 1.5 times larger than that of the randomly oriented ceramics. The second harmonic TE vibration was successfully generated in the layer structure specimens, which contained two layers of the textured ceramics and an internal electrode. Therefore, it was recognized that the layer structure was satisfactorily fabricated.
引用
收藏
页码:1463 / 1466
页数:4
相关论文
共 44 条
[1]   Layered piezoelectric ceramics for fine-tolerance resonator applications [J].
Ando, A ;
Kimura, M ;
Minamikawa, T ;
Sakabe, Y .
INTERNATIONAL JOURNAL OF APPLIED CERAMIC TECHNOLOGY, 2005, 2 (01) :33-44
[2]   Fine-tolerance resonator applications of bismuth-layer-structured ferroelectric ceramics [J].
Ando, A ;
Sawada, T ;
Ogawa, H ;
Kimura, M ;
Sakabe, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (11B) :7057-7061
[3]  
Ando A, 2002, FERROELECTRICS, V268, P65
[4]   Piezoelectric properties of Ba and Ca doped SrBi2Nb2O9 based ceramic materials [J].
Ando, A ;
Kimura, M ;
Sakabe, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (2A) :520-525
[5]  
Ando A, 2003, JPN J APPL PHYS 1, V42, P150, DOI [10.1143/JJAP.42.150, 10.1143/JJAP.42.1501]
[6]  
Ando A., 1999, P 11 INT S APPL FERR, P303
[7]  
AURIVILLIUS B, 1950, ARK KEMI, V1, P463
[8]  
AURIVILLIUS B, 1950, ARK KEMI, V1, P499
[9]  
Aurivillius B., 1950, ARK JPN J APPL PHYS, V13, P1572
[10]  
Berlins H. D., 1961, P IRE, V49, P1161