Inclined dislocation-pair relaxation mechanism in homoepitaxial green GaInN/GaN light-emitting diodes

被引：27

作者：

Zhu, Mingwei ^{[1
,2
]}

You, Shi ^{[1
,2
]}

Detchprohm, Theeradetch ^{[1
,2
]}

Paskova, Tanya ^{[3
]}

Preble, Edward A. ^{[3
]}

Hanser, Drew ^{[3
]}

Wetzel, Christian ^{[1
,2
]}

机构：

[1] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA

[2] Future Chips Constellat, Troy, NY 12180 USA

[3] Kyma Technol Inc, Raleigh, NC 27617 USA

来源：

PHYSICAL REVIEW B | 2010年 / 81卷 / 12期

关键词：

GAN; DEFECTS; GROWTH;

D O I：

10.1103/PhysRevB.81.125325

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The creation of symmetrical pairs of inclined dislocations was observed in the GaInN/GaN quantum wells (QWs) of c-axis grown green light-emitting diodes (LEDs) on low-defect density bulk GaN substrate, but not in green LEDs on sapphire substrate with high threading dislocation (TD) density. Pairs of dislocations start within 20 nm of the same QW and incline 18 degrees-23 degrees toward two opposite << 1100 >> directions or in a 120 degrees pattern. We propose that in the absence of TDs, partial strain relaxation of the QWs drives the defect formation by removal of lattice points between the two dislocation cores. In spite of those inclined dislocation pairs, the light output power of such green LEDs on GaN is about 25% higher than in LEDs of similar wavelength on sapphire.

引用

页数：6

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