Broadband Ultraviolet Self-Powered Photodetector Constructed on Exfoliated β-Ga2O3/CuI Core-Shell Microwire Heterojunction with Superior Reliability

被引：129

作者：

Li, Shan ^{[1
]}

Zhi, Yusong ^{[1
]}

Lu, Chao ^{[2
]}

Wu, Chao ^{[3
,4
]}

Yan, Zuyong ^{[1
]}

Liu, Zeng ^{[1
]}

Yang, Jian ^{[2
]}

Chu, Xulong ^{[1
]}

Guo, Daoyou ^{[3
,4
]}

Li, Peigang ^{[1
]}

Wu, Zhenping ^{[1
]}

Tang, Weihua ^{[1
]}

机构：

[1] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Sch Sci, Lab Informat Funct Mat & Devices, Beijing 100876, Peoples R China

[2] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China

[3] Zhejiang Sci Tech Univ, Ctr Optoelect Mat & Devices, Hangzhou 310018, Peoples R China

[4] Zhejiang Sci Tech Univ, Key Lab Opt Field Manipulat Zhejiang Prov, Dept Phys, Hangzhou 310018, Peoples R China

来源：

JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2021年 / 12卷 / 01期

基金：

中国国家自然科学基金;

关键词：

UV PHOTODETECTOR; PERFORMANCE;

D O I：

10.1021/acs.jpclett.0c03382

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A heterojunction is an essential strategy for multispectral energy-conservation photodetection for its ability to separate photogenerated electron-hole pairs and tune the absorption edge by selecting semiconductors with appropriate bandgaps. A broadband ultraviolet (200-410 nm) self-powered photodetector is constructed on the exfoliated beta-Ga2O3/CuI core-shell microwire heterostructure. Benefiting from the photovoltaic and photoconductive effects, our device performs an excellent ultraviolet (UV) discriminability with a UVC/visible rejection ratio (R-225/R-600) of 8.8 x 10(3) and a UVA/visible rejection ratio (R-400/ R-600) of 2.7 x 10(2), and a self-powered photodetection with a responsivity of 8.46 mA/W, a detectivity of 7.75 x 10(11) Jones, an on/off switching ratio of 4.0 x 10(3), and a raise/decay speed of 97.8/28.9 ms under UVC light. Even without encapsulation, the photodetector keeps a superior stability over ten months. The intrinsically physical insights of the device behaviors are investigated via energy band diagrams, and the charge carrier transfer characteristics of the beta-Ga2O3/CuI interface are predicted by first principle calculation.

引用

页码：447 / 453

页数：7

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