Coupling Effects Between On-Chip Inductors in the Millimeter-Wave Regime

被引：10

作者：

Kang, Kai ^{[1
]}

Tan, Cher Jiun ^{[1
]}

Brinkhoff, James ^{[1
]}

Shi, Jinglin ^{[1
]}

Lin, Fujiang ^{[1
]}

机构：

[1] Agcy Sci Technol & Res, Inst Microelect, Singapore 117685, Singapore

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 04期

关键词：

CMOS; coupled inductors; coupling effects; millimeter-wave (mm-wave) integrated circuit (IC); mutual inductance; radio-frequency integrated circuit (RFIC); scalable model; pi-model; SPIRAL INDUCTORS;

D O I：

10.1109/LED.2010.2041426

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Coupling effects between on-chip spiral inductors operating in the millimeter-wave (mm-wave) regime have been investigated. The trend of the coupling factor as a function of inductor spacing and number of turns is found, and the implications of this for radio-frequency (RF) and mm-wave circuit layout are discussed. A series of coupled circular spiral inductors with different number of turns and distance was fabricated in a 0.18-mu m CMOS process and measured up to 65 GHz. A new SPICE-compatible scalable equivalent circuit model for coupled inductors on silicon is also developed and verified by measurements. The model can help RF and mm-wave circuit designers to characterize the coupling effects of neighboring inductors, optimize layout to save expensive chip area, and achieve first-pass silicon success.

引用

页码：362 / 364

页数：3

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