Design of a Threshold Voltage Insensitive 3T1C Pixel Circuit Using a-IGZO TFT for AMOLED Displays

被引：0
作者：
Singh, Aryamick [1 ]
Kandpal, Kavindra [2 ]
机构：
[1] Birla Inst Technol & Sci Pilani, Dept Elect & Elect, Pilani Campus, Pilani, Rajasthan, India
[2] Indian Inst Informat Technol Allahabad, Dept Elect & Commun Engn, Prayagraj, India
来源：
2020 24TH INTERNATIONAL SYMPOSIUM ON VLSI DESIGN AND TEST (VDAT) | 2020年
关键词：
AMOLED; Pixel Circuit; V-TH compensating; amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs); THIN-FILM TRANSISTORS; STABILITY;
D O I：
10.1109/vdat50263.2020.9190545
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
In this paper, we present an innovative 3T1C (3-TFT, 1-Capacitor) pixel architecture for AMOLED displays. The circuit proposed is voltage-programmed and employs amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The paper presents detailed and extensive analyses discussing the threshold voltage (V-TH) shift detection and neutralizing ability of the proposed circuit along with a comparison with other recent leading-edge pixel circuits. For a 2.5 mu A current, the error in I-OLED is 0.79%, whereas, for a 1 mu A current, the error is 2.27%. Even for a very small current of 50 nA, the error is limited to only 7.75%.
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页数：5
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