Diode Pumped Operation of Tm,Ho:YVO4 Microchip Laser

被引：13

作者：

Li Gang ^{[1
]}

Yao Bao-Quan ^{[1
]}

Zhang Chao-Hui ^{[1
]}

Wang Qiang ^{[1
]}

Wang Yue-Zhu ^{[1
]}

Ju You-Lun ^{[1
]}

机构：

[1] Harbin Inst Technol, Natl Key Lab Tunable Laser Technol, Harbin 150001, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2010年 / 27卷 / 03期

关键词：

CRYSTALS; CONVERSION; TM-YVO4;

D O I：

10.1088/0256-307X/27/3/034201

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A cryogenic and room-temperature diode pumped Tm,Ho:YVO4 microchip laser with 0.5 mm crystal length lasing around 2 mu m is demonstrated for the first time to our knowledge. Under cryogenic temperature of 77 K, as much as 1.2 W output and slope efficiency of 35% with respect to absorbed pump power are obtained. At temperature of 5 degrees C the maximum output power of 48 mW is obtained at an absorbed pump power of 503 mW, representing a 9.5% optical to optical conversion efficiency. In addition, as much as 8 mW single-frequency output lasing at 2052.6 nm is achieved at room temperature of 15 degrees C.

引用

页数：3

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