24-GHz MMIC Development Using 0.15-μm GaAs PHEMT Process for Automotive Radar Applications

被引：0
|
作者：
Luo, Sheng-Ming [1 ]
Hung, Ruei-Yun [1 ]
Weng, Shou-Hsien [1 ]
Ye, Yan-Liang [1 ]
Chuang, Chia-Ning [1 ]
Lin, Chi-Hsien [1 ]
Chang, Hong-Yeh [1 ]
机构：
[1] Natl Cent Univ, Dept Elect Engn, Jhongli 32001, Taiwan
来源：
APMC: 2008 ASIA PACIFIC MICROWAVE CONFERENCE (APMC 2008), VOLS 1-5 | 2008年
关键词：
GaAs; PHEMT; Radar;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents 24-GHz monolithic microwave integrated circuit (MMIC) development for automotive radar applications. The chipset consists of a low noise amplifier (LNA), a power amplifier (PA) and a mixer. The LNA exhibits a small signal gain of 20 dB from 19 to 32 GHz with a noise figure of 3 dB. The PA achieves a small signal gain of 20 dB from 19 to 26 GHz with an Output P-1dB of higher than 21 dBm. The mixer exhibits a conversion loss of 9 dB from 20 to 32 GHz with a port-to-port isolation of better than 24 dB.
引用
收藏
页码：222 / 225
页数：4
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