Hydrogen sensing characteristics of high electron mobility transistor with a catalytic Pd metal

被引：1

作者：

Lin, K. W. ^{[1
]}

机构：

[1] Chien Kuo Technol Univ, Dept Elect Engn, Changhua, Taiwan

来源：

THERMEC 2006, PTS 1-5 | 2007年 / 539-543卷

关键词：

HFET; (NH4)(2)S-x; sulfur treatment; temperature-dependent characteristics;

D O I：

10.4028/www.scientific.net/MSF.539-543.5025

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, the comprehensive study of an interesting Pd/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) based hydrogen sensor is implemented. The theoretical analysis and simulation are made by using a two-dimensional simulator Medici. In addition, a practical device is fabricated successfully. Based on the variations of the catalytic metal work function, the DC characteristics of experimental and simulated results are compared and studied.

引用

页码：5025 / 5030

页数：6

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