Comparison of electron-phonon and hole-phonon energy loss rates in silicon

被引：0

作者：

Richardson-Bullock, J. S. ^{[1
]}

Prest, M. J. ^{[1
]}

Shah, V. A. ^{[1
]}

Gunnarsson, D. ^{[2
]}

Prunnila, M. ^{[2
]}

Dobbie, A. ^{[1
]}

Myronov, M. ^{[1
]}

Morris, R. J. H. ^{[1
]}

Whall, T. E. ^{[1
]}

Parker, E. H. C. ^{[1
]}

Leadley, D. R. ^{[1
]}

机构：

[1] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

[2] VTT, Tech Res Ctr Finland, FI-02044 Espoo, Finland

来源：

SOLID-STATE ELECTRONICS | 2015年 / 103卷

基金：

英国工程与自然科学研究理事会; 芬兰科学院;

关键词：

Hole; Electron; Phonon; Coupling; Energy loss rate; REFRIGERATION;

D O I：

10.1016/j.sse.2014.09.002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The hole-phonon energy loss rate in silicon is measured at phonon temperatures ranging from 300 mK to 700 mK. We demonstrate that it is approximately an order of magnitude higher than the corresponding electron-phonon energy loss rate over an identical temperature range. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：40 / 43

页数：4

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