Fabrication of Highly Scaled Silicon Nanowire Gate-All-Around Metal-Oxide-Semiconductor Field Effect Transistors by Using Self-Aligned Local-Channel V-gate by Optical Lithography Process

The silicon nanowire gate-all-around (GAA) metal-oxide-semiconductor field effect transistors (MOSFETs) have been fabricated by using inverted sidewall spacers to scale the gate length The patterning strategy of inverted sidewall spacers is based on the self-aligned local-channel V-shaped gate electrode (V-gate) by optical lithography (SALVO) process Through this technique, we have obtained an aggressively scaled gate length down to 10 nm regime In addition, the silicon nanowire structure with diameter of about 10 nm has been successfully formed by reducing of the local channel In the fabricated device, we have confirmed that it has excellent device characteristics in terms of the sub-threshold swing (SS), drain induced barrier lowering (DIBL), and low level of off-state leakage current in spite of the short-channel effect (SCE) (C) 2010 The Japan Society of Applied Physics