Thermal Modeling of 3-D Stacked DRAM Over SiGe HBT BiCMOS CPU

被引：0

作者：

Clarke, Ryan ^{[1
]}

Jacob, Philip ^{[2
]}

Erdogan, Okan ^{[3
]}

Belemijian, Paul ^{[4
]}

Raman, Srikumar ^{[1
]}

Leroy, Mitchell R. ^{[1
]}

Neogi, Tuhin Guha ^{[5
]}

Kraft, Russell P. ^{[1
]}

Borca-Tasciuc, Diana-Andra ^{[6
]}

McDonald, John F. ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Ctr Integrated Elect, Troy, NY 12180 USA

[2] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

[3] Istanbul Tech Univ, Natl High Performance Ctr Turkey, TR-34469 Istanbul, Turkey

[4] Naval Res Lab, Baltimore, MD 21227 USA

[5] GlobalFoundries, Malta, NY 12020 USA

[6] Rensselaer Polytech Inst, Dept Mech Aerosp & Nucl Engn, Troy, NY 12180 USA

来源：

IEEE ACCESS | 2015年 / 3卷

基金：

美国国家科学基金会;

关键词：

Microprocessors; memory; simulation; modeling; Moore's law; 3D IC; thermal management; thermal analysis; DIAMOND; CONDUCTIVITY;

D O I：

10.1109/ACCESS.2015.2396474

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

We have previously evaluated the feasibility of a serial code accelerator core with 3-D DRAM stacked on the core operating at high frequencies. While operating at such high frequencies (> 24 GHz), there are concerns with removing heat from the 3-D stack. We propose the use of thin diamond sheets, which have high thermal conductivity, as a heat spreader by bonding it close to the processor core substrate and memory stacks. We show, through thermal modeling using COMSOL finite-element analysis tools, the feasibility of diamond as an effective heat spreader in a processor-memory 3-D stack.

引用

页码：43 / 54

页数：12

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