The relationship between resistivity and temperature for Hg1-xCdxTe photoconductive detectors

被引：0
|
作者：
Gui, YS [1 ]
Zheng, GZ [1 ]
Zhang, XC [1 ]
Guo, SL [1 ]
Chu, JH [1 ]
Cai, Y [1 ]
机构：
[1] Acad Sinica, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
来源：
THIRD INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS | 1998年 / 3175卷
关键词：
resistivity; accumulated layer; Hg1-xCdxTe photoconductive detector;
D O I：
10.1117/12.300710
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Two kinds of mio dimensional electrons in same surface have been found in Hg1-xCdxTe (x=0.214) photoconductive detectors from studies of the shubnikov-de Haas (SdH) oscillation. It has been found that the number of electrons in each kind is about constant from 1.5K to 55K by SdH measurements. A model considered two kinds of surface electrons is proposed to fit the temperature dependence of the resistivity. The electrical parameters obtained by this model agree well with the experiment and the results given by SdH measurements. This paper offers a simple and effective model to investigate the bulk and surface electrical properties for a two-terminal device.
引用
收藏
页码：391 / 394
页数：4
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