Two-stage broadband high-gain W-band amplifier using 0.1-μm metamorphic HEMT technology

被引：33

作者：

Lee, BH ^{[1
]}

An, D ^{[1
]}

Lee, MK ^{[1
]}

Lim, BO ^{[1
]}

Kim, SD ^{[1
]}

Rhee, JK ^{[1
]}

机构：

[1] Millimeter Wave Innovat Technol Res Ctr, Seoul 100715, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 12期

关键词：

broadband amplifier; 0.1-mu m metamorphic high electron mobility transistor (MHEMT); W-band;

D O I：

10.1109/LED.2004.838506

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report broadband high-gain W-band monolithic microwave integrated circuit amplifiers based on 0.1-mum InGaAs-InAlAs-GaAs metamorphic high electron mobility transistor (MHEMT) technology. The amplifiers show excellent S-21 gains greater than 10 dB in a very broad W-band frequency range of 75-100 GHz, thereby exhibiting a S-21 gain of 10.1 dB, a S-11 of -5.1 dB and a S-22 of -5.2 dB at 100 GHz, respectively. The high gain of the amplifier is mainly attributed to the performance of the MHEMTs exhibiting a maximum transconductance of 691 mS/mm, a current gain cutoff frequency of 189 GHz, and a maximum oscillation frequency of 334 GHz.

引用

页码：766 / 768

页数：3

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