Extended tunability in a two-chip VECSEL

被引:44
作者
Fan, Li [1 ]
Fallahi, Mahmoud
Zakharian, Aramais R.
Hader, Jorg
Moloney, Jerome V.
Bedford, Robert
Murray, James T.
Stolz, Wolfgang
Koch, Stephan W.
机构
[1] Univ Arizona, Coll Opt Sci, Tucson, AZ 85721 USA
[2] Univ Arizona, Arizona Ctr Math Sci, Tucson, AZ 85721 USA
[3] Univ Arizona, Coll Opt Sci, Tucson, AZ 85721 USA
[4] USAF, Res Lab, Wright Patterson AFB, OH 45433 USA
[5] Arete Associates, Tucson, AZ 85712 USA
[6] Univ Marburg, Dept Phys, D-35032 Marburg, Germany
[7] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany
关键词
birefringent filter (BF); optically pumped semiconductor laser; tunable linearly polarized vertical-external-cavity surface-emitting laser (VECSEL);
D O I
10.1109/LPT.2007.893898
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We demonstrate a widely tunable vertical-externalcavity surface-emitting laser (VECSEL) with a W-shaped cavity, in which two VECSEL chips serve as fold mirrors and a birefringent filter is inserted at Brewster's angle. These two chips provide much higher modal gain and broader bandwidth of the gain than a single chip does, enhancing the VECSEL tuning range and re-ducing the variation of tunable output power with the tuned wavelength. This two-chip VECSEL configuration makes it possible to shape the modal gain spectra of the laser or to manipulate the tuning curve of the laser by two different chips with certain gain peak detuning (offset). Multiwatts high-brightness linearly polarized output with a tuning range of 33 nm is demonstrated in such a two-chip VECSEL.
引用
收藏
页码:544 / 546
页数:3
相关论文
共 7 条
  • [1] Tunable high-power high-brightness linearly polarized vertical-external-cavity surface-emitting lasers
    Fan, L
    Fallahi, M
    Murray, JT
    Bedford, R
    Kaneda, Y
    Zakharian, AR
    Hader, J
    Moloney, JV
    Stolz, W
    Koch, SW
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (02) : 1 - 3
  • [2] FAN L, IN PRESS OPT LETT
  • [3] Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling
    Fan, Li
    Hsu, Ta-Chen
    Fallahi, Mahmoud
    Murray, James T.
    Bedford, Robert
    Kaneda, Yushi
    Hader, Jorg
    Zakharian, Aramais R.
    Moloney, Jerome V.
    Koch, Stephan W.
    Stolz, Wolfgang
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (25)
  • [4] Semiconductor-laser-pumped high-power upconversion laser
    Heumann, E
    Bär, S
    Rademaker, K
    Huber, G
    Butterworth, S
    Diening, A
    Seelert, W
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (06)
  • [5] High brightness spectral beam combination of high-power vertical-external-cavity surface-emitting lasers
    Kaneda, Yushi
    Fan, Li
    Hsu, Ta-Chen
    Peyghambarian, Nasser
    Fallahi, Mahmoud
    Zakharian, Armis R.
    Hader, Joerg
    Moloney, Jerome V.
    Stoltz, Wolfgang
    Koch, Stephan
    Bedford, Robert
    Sevian, Armen
    Glebov, Leonid
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (17-20) : 1795 - 1797
  • [6] Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams
    Kuznetsov, M
    Hakimi, F
    Sprague, R
    Mooradian, A
    [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1999, 5 (03) : 561 - 573
  • [7] Vertical-external-cavity semiconductor lasers
    Tropper, AC
    Foreman, HD
    Garnache, A
    Wilcox, KG
    Hoogland, SH
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2004, 37 (09) : R75 - R85